IRFZ40 DATASHEET PDF

IRFZ40 Transistor Datasheet, IRFZ40 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRFZ40 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRFZ40 MOSFET. Symbol. Parameter. Value. Unit. IRFZ IRFZ40FI. VDS. Drain-source Voltage ( VGS = 0). V. VDG R. Drain- gate Voltage (RGS = 20 kΩ). V. VGS.

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Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.

B, Mar This datasheet is subject to change without notice. Products may be manufactured at one of several qualified locations.

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Case Temperature td off tf tr Fig. Repetitive rating; pulse width limited by maximum junction temperature see fig. The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Except as expressly indicated in writing, Datqsheet products are not designed for use in medical, life-saving, or life-sustaining applications or for ddatasheet other application in which the failure of the Vishay product could result in personal injury or death.

IRFZ40 Datasheet(PDF) – Samsung semiconductor

The TOAB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W.

Such statements are not binding statements about the suitability of products for a particular application.

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Please note that some Vishay documentation may still make reference to the IEC definition. Drain Current Current regulator Same type as D. Product names and markings noted herein may be trademarks of their respective owners.

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